Abstract
A novel micro-laser configuration formed by integrating an InGaAs/InP pillar with
a silicon photonic crystal cavity is proposed and analyzed in detail. Special attention
is paid to designing the cavity such that it can accommodate large-size pillars without
performance compromise. The Purcell effect is studied and predicted to be significant
because of the close interaction between the cavity modes and the gain medium. An
overall quality factor as high as 1 × 105 and a spontaneous emission
factor close to unity are predicted. Possible limiting factors for laser performance,
such as surface non-radiative recombination and the thermal dissipation properties are
analyzed, and it is found that the proposed laser design is very robust. This
comprehensive analysis suggests that the proposed micro-laser is a promising candidate
for large-scale integration of micro-lasers on silicon for low power consumption
applications, such as intra-chip optical communications.
© 2013 IEEE
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