Abstract
In this paper, we report the environmental, optical, and gate bias stress
stability of amorphous zinc–tin–oxide (ZTO) thin-film transistors (TFTs) fabricated by
sol-gel spin-coating method. The ZTO TFTs showed excellent environmental and optical
stability. The threshold voltage stability of ZTO TFTs was sensitive to both positive
and negative gate bias stress. Maximum threshold voltage shifting of +1.9 and -3.2 V
was observed under a gate bias stress of +10 and -10 V, respectively, with no
significant change to subthreshold swing value.
© 2011 IEEE
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