Abstract
The recent progress on Raman scattering in GaN single crystals and GaN/AlN
heterostructures is reviewed. Anti-Stokes Raman scattering is used to determine electron-phonon
scattering time and decay time constant for longitudinal-optical phonons. In a typical high electron
mobility transistor based on GaN/AlN heterostructures, strong resonances are reached for the
first-order and second-order Raman scattering processes. Therefore, both Stokes and anti-Stokes
Raman intensities are dramatically enhanced. The feasibility for laser cooling of a nitride
structure is studied. A further optimization will enable us to reach the threshold for laser
cooling. Raman scattering have potential applications in up-conversion lasers and laser cooling of
nitride ultrafast electronic and optoelectronic devices.
© 2013 Chinese Optics Letters
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