Abstract

Equilateral triangle semiconductor microcavities with tensile-strained InGaAsP multi-quantum-well as the active region are fabricated by the inductively coupled plasma (ICP) etching technique. The mode characteristics of the fabricated microcavities are investigated by photoluminescence, and enhanced peaks of the photoluminescence spectra corresponding to the fundamental transverse modes are observed for microcavities with side lengths of 5 and 10 ?m. The mode wavelength spacings measured experimentally coincide very well with those obtained by the theoretical formulae.

© 2005 Chinese Optics Letters

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