Abstract

The spectral dependence of the refractive index <i>n</i> and extinction coefficient <i>k</i> of chemical-vapor-deposited (CVD) silicon oxide film on silicon wafer has been determined. The results are used to calculate spectral absorbances for 0.1-2 μm thick oxide films with unchanged structure. The dependence on thickness of the position of Si-O stretching (<i>v_M</i>) has been investigated. The main factor influencing the frequency is the transmission factor at the air/film and film/substrate boundaries. In the limit of d → 0, <i>v_M</i> corresponds to the maximum of the Im (ε) function.

Infrared ellipsometry study of the thickness-dependent vibration frequency shifts in silicon dioxide films

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Appl. Opt. 9(7) 1577-1586 (1970)

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T. W. Hou and C. J. Mogab
Appl. Opt. 20(18) 3184-3188 (1981)

Reflectance of thinly oxidized silicon at normal incidence

Tony Huen
Appl. Opt. 18(12) 1927-1932 (1979)

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Hang Jiang, Yuanan Zhao, Hao Ma, Yi Wu, Meiling Chen, Mengxia Wang, Weili Zhang, Yujie Peng, Yuxin Leng, Zhaoliang Cao, and Jianda Shao
Opt. Express 31(2) 2208-2224 (2023)