Abstract

A linear piecewise model has been formulated to analyze the performance of a metallic microheater integrated with single-mode waveguides ($\lambda \sim 1550\mathrm{nm}$) in silicon-on-insulator (SOI). The model has been used to evaluate integrated optical microheaters fabricated in a SOI substrate with 2 µm device layer thickness. The Fabry–Perot modulation technique has been used to extract the effective thermo-optic phase shift and response time. The effective thermal power budget of $P_{\text{eff},\pi }\sim 500\mathrm{\mu W}$ (out of actually consumed power $P_{\pi }=1.1\mathrm{mW}$) for a $\pi$ phase shift and a switching time of $\tau \sim 9\mathrm{\mu s}$, have been recorded for a typical Ti heater stripe of length $L_H=50\mathrm{\mu m}$, width $W_H=2\mathrm{\mu m}$, and thickness $t_H\sim 150\mathrm{nm}$, integrated with a Fabry–Perot waveguide cavity of length $\sim 20\mathrm{mm}$. It has been shown that the performance of a heater improves (in terms of power budget) as the length of a microheater decreases. However, smaller heater size requires higher joule heating to obtain a desired phase shift, which is again found to be dependent on polarization of the guided mode because of thermal stress.

© 2016 Optical Society of America

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