Abstract
We report on the development of a frequency modulatable 795 nm semiconductor laser based on self-injection locking to a high-quality-factor whispering-gallery-mode microresonator. The laser is characterized by residual amplitude modulation below and frequency noise better than at offset frequencies ranging from 100 Hz to 10 MHz. The frequency modulation speed and span of the laser exceed 1 MHz and 4 GHz, respectively. Locking of the laser to the Doppler-free saturated absorption resonance of the line is demonstrated and relative frequency stability better than is measured for integration time spanning from 1 s to 1 day. The architecture demonstrated in this study is suitable for the realization of frequency modulatable lasers at any wavelength.
© 2015 Optical Society of America
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