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Characterization of silicon nanowire by use of full-vectorial finite element method

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Abstract

We have carried out a rigorous H-field-based full-vectorial modal analysis and used it to characterize, more accurately, the abrupt dielectric discontinuity of a high index contrast optical waveguide. The full-vectorial H and E fields and the Poynting vector profiles are described in detail. It has been shown through this work that the mode profile of a circular silicon nanowire is not circular and also contains a strong axial field component. The single-mode operation, vector field profiles, modal hybridness, modal ellipticity, and group velocity dispersion of this silicon nanowire are also presented.

© 2010 Optical Society of America

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