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Abstract
We present and erratum to our review article [Opt. Mater. Express 12, 2145 (2022) [CrossRef] ]. This erratum corrects the references in Table 3, a typo, and a misleading sentence. These corrections do not affect conclusions of the original review article.
© 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
Due to a dysfunctioning reference software, we present an erratum for [1], correcting several references for Table 3, shown below. The table references are provided in the bibliography section of this article with the numbering from the article, along with correction in [124] and [132] (inverted), as well as references [100] and [101] (inverted).
| Reference | Material | Patterning | Endurance (Cycles) | Switching Mechanism | Deposition Method | Capping Layer | Switched area |
|---|---|---|---|---|---|---|---|
| [144] | GST | No Patterning | 1.3 × 102 | Electrical | Sputtering | 10 nm ITO | 10−2 µm2 |
| [26] | GST | No Patterning | 50 | Optical | Sputtering | 100 nm ZnS/SiO2 | 104 µm2 |
| [113] | Sb2S3 | No Patterning | 7 × 103 | Optical | Thermal Evaporation | 10 nm Al2O3 | Unspecified |
| [104] | GSST | Lift-Off | 40 | Electrothermal | Thermal Evaporation | 15 nm Al2O3 | 104 µm2 |
| [53] | Sb2Se3 | Lift-off | > 125 | Electrothermal | Thermal Evaporation | 15 nm Al2O3 | 25 µm2 |
| [47] | Sb2Se3 | No Patterning | 5 × 103 | Optical | Sputtering | 200 nm ZnS/SiO2 | 104 µm2 |
| [47] | Sb2S3 | No Patterning | 103 | Optical | Sputtering | 200 nm ZnS/SiO2 | 104 µm2 |
| [52] | Sb2Se3 | Lift-off | 5 × 102 | Optical | Sputtering | 200 nm ZnS/SiO2 | 103 µm2 |
| [110] | GST | Lift-off | > 5 × 102 | Electrothermal | Sputtering | 30 nm Al2O3 | 1 µm2 |
| [45] | GSST | Lift-off | > 103 | Electrothermal | Thermal Evaporation | 20 nm MgF2 | 102 µm2 |
| [145] | Ge2Sb2Se5 | Lift-off | > 5 × 105 | Electrothermal | Thermal Evaporation | 600 nm Al2O3 | 104 µm2 |
| [146] | Sb7Te3 | 1.5 × 108 | Electrothermal | Unspecified | Unspecified | Unspecified | |
| [116] | GST | - | 2 × 1012 | Electrical | ALD | Unspecified | 10−3 µm2 |
| [117] | D-GST | - | > 109 | Electrical | Sputtering | Unspecified | Unspecified |
In section 3.2, we have corrected the sentence describing the consequences of electromigration on elemental segregation as follows:
In the case of our reference GST alloy, this difference is substantial, with an electronegativity of 5.49 eV for Te compared to 4.6 and 4.85 eV for Ge and Sb respectively [127]. By analyzing PCM cells which failed under DC bias, it has been observed that Sb and Ge migrate towards the cathode while Te moves toward the anode [124, 127] While electromigration is relatively slow in the solid phase, it is much faster in the liquid phase, e.g. upon re-amorphization, eventually leading to mechanical failure (see Fig. 8).
Finally, in section 3.3, we have corrected a typography, replacing Sb2S3 with Sb2Se3
Sb2Se3 and Sb2S3 are two promising alloys with moderate index contrast, which have also shown different behavior under switching. Recent works cycling thermally evaporated Sb2Se3 capped with 10 nm Al2O3 have shown cyclability over a minimum of 125 cycles [53].
Funding
Charles Stark Draper Laboratory; Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung (P500PT_203222).
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