Enhancement of silicon vacancy fluorescence intensity in SiC using dielectric cavity

• Qi-Cheng Hu, Ji Xu, Qin-Yue Luo, Hai-Bo Hu, Pei-Jie Guo, Cheng-Ying Liu, Shuang Zhao, Yu Zhou, and Junfeng Wang
• received 03/04/2024; accepted 04/29/2024; posted 04/29/2024; Doc. ID 522770
• Abstract: Over past decades, spin qubits in silicon carbide (SiC)have emerged as promising platforms for a wide rangeof quantum technologies. The fluorescence intensityholds significant importance in the performance of quantum photonics, quantum information process, and sensitivity of quantum sensing. In this work, a dual-layerAu/SiO2 dielectric cavity is employed to enhance thefluorescence intensity of the shallow silicon vacancy in4H-SiC. Experimental results demonstrate a significant5-fold augmentation in fluorescence count, corroborating our theoretical predictions. Based on this, we further investigate the influence of dielectric cavities onthe contrast and linewidth of optically detected magnetic resonance (ODMR). There is a 2-fold improvementin magnetic field sensitivity. In spin echo experiments,coherence times remain constant regardless of the thickness of dielectric cavities. These experiments pave theway for broader applications of dielectric cavities inSiC-based quantum technologies.