Abstract
Epitaxial films of neodymium-doped sapphire have been grown by molecular beam epitaxy on R-, A-, and M-plane sapphire substrates. The emission spectrum features sharp lines consistent with single-site doping of the ion into the host crystal. This material is believed to be a nonequilibrium phase, inaccessible by conventional high-temperature growth methods. Neodymium-doped sapphire has a promising lasing line at with an emission cross section of , similar to the line of .
© 2009 Optical Society of America
Full Article | PDF ArticleMore Like This
Raveen Kumaran, Thomas Tiedje, Scott E. Webster, Shawn Penson, and Wei Li
Opt. Lett. 35(22) 3793-3795 (2010)
Grace D. Metcalfe, Eric D. Readinger, Ryan Enck, Hongen Shen, Michael Wraback, Nathaniel T. Woodward, Jon Poplawsky, and Volkmar Dierolf
Opt. Mater. Express 1(1) 78-84 (2011)
Jing Yang, Mart B. J. Diemeer, Dimitri Geskus, Gabriël Sengo, Markus Pollnau, and Alfred Driessen
Opt. Lett. 34(4) 473-475 (2009)