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Abstract
We present some comments to the paper “Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: comment,” [Opt. Express 22, A1589 (2014)].
© 2017 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
1. Introduction
We appreciate the comment which kindly reminds us the improper interpretation of gate width in reference [1]. Considering the geometry of circular shape of MOSFET which surrounds the LED as shown in Fig. 2(a) of reference [2], the transistor gate width is approximate to 1320 µm, and hence the modified current density and transconductance are 38.74 mA/mm and 15.05 mS/mm, respectively. As compared to the previously published values in reference [2], they become much smaller, and yet are more reasonable while considering we use an easy-fabricated structure to mainly validate the feasibility of revealed scheme that is able to monolithically integrate the LED/MOSFET device. The I-V characteristic shown in Fig. 5 of reference [2] is mainly due to the measurement variation in between different LED/MOSFET devices, which could be further optimized by improving the epitaxial uniformity and/or the device manufacturing process.
Funding
Ministry of Science and Technology in Taiwan (contract No. MOST 106–2112–M–003–006–MY3); Bureau of Energy, Ministry of Economic Affairs in Taiwan.
References and links
1. Y. Cai, “Comment on ‘Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors,’,” Opt. Express 26, A108 (2018).
2. Y. J. Lee, Z. P. Yang, P. G. Chen, Y. A. Hsieh, Y. C. Yao, M. H. Liao, M. H. Lee, M. T. Wang, and J. M. Hwang, “Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors,” Opt. Express 22(S6Suppl 6), A1589–A1595 (2014). [CrossRef] [PubMed]