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We correct the value for the nonlinear Kerr effect of the silicon-rich nitride waveguide presented in [Opt. Express 23, 25828 (20152015)].
© 2017 Optical Society of America
In [1], we presented an experimental study of the linear and nonlinear properties of silicon-rich nitride waveguides fabricated via low-pressure chemical vapor deposition (LPCVD). Owing to an error in the estimated coupled power in the two-pump experiment, we have overestimated the nonlinear Kerr parameter of the waveguide. The corrected Fig. 4(d) should be:
From this figure we infer a nonlinear parameter γ = 3 (W·m)−1 leading to a nonlinear coefficient n2 = 0.6 · 10−18 m2/W.
The Table 1 should therefore look as follows
Table 1. Comparison of nonlinear Kerr coefficient n2 and optical band gap energy Eg for silicon, silicon-enriched nitride and stoichiometric silicon nitride.
The main conclusion in [1] is still valid. Varying the relative composition between silicon and nitride during LPCVD deposition provides a higher Kerr coefficient than what is possible with stoichiometric silicon nitride.
References and links
1. C. J. Krückel, A. Fülöp, T. Klintberg, J. Bengtsson, P. A. Andrekson, and V. Torres-Company, “Linear and nonlinear characterization of low-stress high-confinement silicon-rich nitride waveguides,” Opt. Express 23(20), 25828–25837 (2015). [CrossRef]
