Abstract
The electron spin-relaxation time of InGaAs/InP multiple-quantum wells has been measured to be 5.2 ps for 1.54-µm excitonic absorption. This is an order of magnitude faster than in GaAs quantum wells indicating the possibility of femtoseconds all-optical gate operation in the long- wavelength region.
Semiconductor nonlinear optics including MQW, Alloptical devices, Ultrafast devices, Ultrafast processes in condensed matter.
© 1997 Optical Society of America
PDF ArticleMore Like This
Atsushi Tackeuchi, Yuji Nishikawa, Masaomi Yamaguchi, Shunichi Muto, and Osamu Wada
17D4.5 Optoelectronics and Communications Conference (OECC) 1996
Charis Reith, Steven J. White, Michael Mazilu, Alan Miller, Mircea Guina, and Janne Konttinen
JTuD99 Conference on Lasers and Electro-Optics (CLEO:S&I) 2006
J. T. Hyland, G.T. Kennedy, A. Miller, and C.C. Button
QTuA4 Quantum Optoelectronics (QOE) 1999