Abstract
We have fabricated diode laser mirrors which are circularly curved in the junction plane. The curvature is designed to provide good reflective feedback and to simultaneously form an output lens which reduces the divergence of the output laser beam. The lenses were monolithically integrated with low-threshold (25 mA) cw buried-heterostructure (BH) devices. The lasers were fabricated in GaInAsP/lnP wafers grown by liquid phase epitaxy (LPE) and emit at wavelengths near 1.3 µm.
© 1987 Optical Society of America
PDF ArticleMore Like This
V. Diadiuk, J.N. Walpole, and Z.L. Liau
WA4 Semiconductor Lasers (ASLA) 1987
K. Wakao, K. Nakai, T. Sanada, M. Kuno, and S. Yamakoshi
TuD5 Semiconductor Lasers (ASLA) 1987
P. Tihanyi, D. K. Wagner, H. J. Vollmer, A. J. Roza, C. M. Harding, R. J. Davis, and E. D. Wolf
ThT4 Conference on Lasers and Electro-Optics (CLEO:S&I) 1987