Abstract
Selective growth on patterned substrates is one of the most attractive techniques to fabricate semiconductor quantum wires (QWRs).1-5 However, the density of QWRs is limited by lithographic process in most cases and the size fluctuation of mask pattern cannot be avoided. If a cleaved facet of AIGaAs/GaAs superlattice is used as a selective growth mask, QWRs with high density and very small quantum wires. Finally, the QWRs were buried with GaAs. Figure 1 shows a scanning microimage of the cross section of the sample.
© 1996 Optical Society of America
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