Abstract
Quantitative understanding of Coulomb-mediated carrier-carrier interactions relies on properly designed experiments and theories. Absorption hole-burning measurements near the band edge of undoped and doped GaAs/AlGaAs quantum wells (QW) have been made by Knox et al.1 They found that the presence of a dense Fermi sea of electrons produces an extraordinarily fast carrier thermalization, whereas the same density of holes yields a thermalization time close to that of undoped samples; also in the undoped sample, even for an injected electron-hole density , the thermalization time is still more than 3 times longer than that in the n-type doped sample.
© 1992 Optical Society of America
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