A wafer-scale removal rate model for chemical mechanical planarization

John Kelchner; Stephen Beaudoin

doi:10.1364/OFT.2004.OMC3

Frontiers in Optics 2004/Laser Science XXII/Diffractive Optics and Micro-Optics/Optical Fabrication and Testing
OSA Technical Digest (CD) (Optica Publishing Group, 2004),
paper OMC3
•https://doi.org/10.1364/OFT.2004.OMC3

A wafer-scale removal rate model for chemical mechanical planarization

John Kelchner and Stephen Beaudoin

Optical Fabrication and Testing 2004

Rochester, New York United States
11–13 October 2004
ISBN: 1-55752-779-2

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Grinding and Polishing (OMC)

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J. Kelchner and S. Beaudoin, "A wafer-scale removal rate model for chemical mechanical planarization," in Frontiers in Optics 2004/Laser Science XXII/Diffractive Optics and Micro-Optics/Optical Fabrication and Testing, OSA Technical Digest (CD) (Optica Publishing Group, 2004), paper OMC3.

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Abstract

A model to describe removal rates during silicon dioxide polishing has been developed and validated. The model includes submodels for the bulk pad behavior, the behavior of pad asperities, and the pad-wafer relative velocity.

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