Abstract
We describe THz amplifier and front-end modules that have been developed based on an InGaAs metamorphic HEMT (mHEMT) technology for THz-wireless communication applications around 300 GHz, covering the frequency range between 270 and 330 GHz and enabling record output-power levels above 10 dBm. Furthermore, we report on the development of state-of-the-art distributed mHEMT circuits with absolute bandwidths in excess of 300 GHz as building block of next-generation ultra-broadband THz front ends.
© 2024 The Author(s)
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