Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Ultra-Fast Ge-on-Si Photodetectors

Not Accessible

Your library or personal account may give you access

Abstract

A Ge-fin photodetector in which un-doped germanium is laterally sandwiched between complementary in situ-doped silicon is demonstrated, allowing for unprecedented 3-dB bandwidths up to 265 GHz. Here, we review our work on ultra-fast Ge photodiodes.

© 2024 The Author(s)

PDF Article
More Like This
Ultra-fast Germanium Photodiodes (invited)

Stefan Lischke, Anna Peczek, Daniel Steckler, Jesse Morgan, Andreas Beling, and Lars Zimmermann
SM4G.5 CLEO: Science and Innovations (CLEO:S&I) 2023

Sub-terahertz interconnection based on Ge-Si photodetector

Wei Chen, Yilun Wang, Liao Chen, Zhibin Jiang, Zhibo Hou, Yu Yu, and Xinliang Zhang
Th2A.24 Optical Fiber Communication Conference (OFC) 2024

Ultra-Small Butt-Joint Ge Photodetector Featuring Self-Aligned In-situ Doping and CMP-Free Novel CVD Process

M. Miura, J. Fujikata, M. Noguchi, and Y. Arakawa
M2G.5 Optical Fiber Communication Conference (OFC) 2014

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.