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256 GBd Barium-Titanate-on-SiN Mach-Zehnder Modulator

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Abstract

We demonstrate a 110-GHz BTO Mach-Zehnder modulator integrated on foundry- produced silicon nitride for 340 Gbit/s data links. This approach, featuring nano-scale plasmonics and highly nonlinear BTO, proves to be a viable platform for next-generation Tbit/s links.

© 2024 The Author(s)

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