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Monolithically integrated self-aligned SiN edge coupler with <0.6/0.8 dB TE/TM insertion loss, <-39 dB back reflection and >520 mW high-power handling capability

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Abstract

We experimentally demonstrated V-groove-based self-aligned SiN edge coupler (EC) on a monolithic CMOS-SiPh platform. <0.6/0.8 dB TE/TM SMF-EC transmission efficiency, in conjunction with <-39 dB back reflection and >520 mW power handling capability were achieved.

© 2023 The Author(s)

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