Abstract

We present vertically-stacked a-Si:H and AlN photonic circuits deposited on silicon using back-end CMOS technology. At 1550-nm telecom wavelengths, the a-Si:H (0.5-μm × 0.22-μm) and AlN (1-μm × 0.4-μm) channel waveguides are measured to have low propagation losses of ~3.8 and ~1.4 dB/cm, respectively. Various passive devices with high performance are demonstrated on these two photonic layers, including multimode interferences (MMI), waveguide ring resonators (WRR), and arrayed-waveguide gratings (AWG). Moreover, the thermo-optic coefficients (dn/dT) of a-Si:H and AlN are measured to be ~2.60×10⁻⁴ and ~3.56×10⁻⁵ K⁻¹, respectively.

© 2015 Optical Society of America