Abstract
The triangular barrier photodiode (TBP)1 has exhibited very large optical gains exceeding 1000 at low applied biases of < 1V. The importance of the TBP could be significantly enhanced if the device could be integrated with a technologically compatible transistor to form an integrated photoreceiver. The vertical n+-i-n+ structure of the n-type TBP precludes simple use of either a bipolar or field effect transistor. However, if a p+ layer is grown on top of the n+ top layer of the TBP, a novel triangular barrier transistor (TBT) can be realized.
© 1983 Optical Society of America
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