Novel InP Based Optoelectronic Devices for Microwave Photonics Applications

Changzheng Sun; Bing Xiong; Yi Luo

doi:10.1364/OEDI.2014.OTh2C.3

International Photonics and OptoElectronics Meetings
OSA Technical Digest (online) (Optica Publishing Group, 2014),
paper OTh2C.3
•https://doi.org/10.1364/OEDI.2014.OTh2C.3

Novel InP Based Optoelectronic Devices for Microwave Photonics Applications

Changzheng Sun, Bing Xiong, and Yi Luo

Optoelectronic Devices and Integration 2014

Wuhan China
18–21 June 2014
ISBN: 1-55752-277-4

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Microwave Photonics (OTh2C)

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C. Sun, B. Xiong, and Y. Luo, "Novel InP Based Optoelectronic Devices for Microwave Photonics Applications," in International Photonics and OptoElectronics Meetings, OSA Technical Digest (online) (Optica Publishing Group, 2014), paper OTh2C.3.

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Abstract

Semiconductor electro-optic modulators with reduced waveguide loss and enhanced modulation efficiency are fabricated based on novel n-i-n InGaAlAs/InAlAs multiple quantum barriers. Back-to-back uni-traveling-carrier photodiodes with high responsivity, high saturation current and wide bandwidth are demonstrated.

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