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X-ray lithography in the government microelectronics program

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Abstract

X-ray lithography has always been a part of the DOD very-high-speed-integrated-circuit program. Early exploratory programs (phase III efforts) centered around the design and construction of point-source tools using conventional e-beam excited sources. The goal here was to scope out the limitations and advantages of the technology. This work has recently culminated in the delivery of the Perkin-Elmer XSAR machine to Honeywell for pilot-line evaluation. More recent efforts centered on using high-brightness point sources to characterize resists and novel mask-making approaches. These programs run parallel to DOE efforts in high-brightness synchrotron sources. Focus is shifting to the mask-making area as the final barrier which must be overcome before this technology is inserted on production line.

© 1988 Optical Society of America

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