Abstract

In order to grow silicon films with good crystal quality, it is important to remove oxygen and carbon contaminants on the surface and to obtain clean substrate surface immediately before growth. In conventional surface cleaning process, silicon substrate is heated up to about 1000°C and the surface contaminants are evaporated or gas-etched from the substrate surface. However, such high temperature treatment causes the redistribution of impurity atoms in the substrates and it makes difficult to fabricate fine structures. Recently, synchrotron radiation (SR) stimulated evaporation of SiO₂ film and its application to surface cleaning at 650°C have been reported¹⁾, and the usefulness of SR induced reactions for low-temperature process is being recognized.

© 1991 Optical Society of America