Abstract
Membrane lasers, in which a thin active region is sandwiched by low-index materials, are essential for achieving extremely low power consumption with high-speed direct modulation. These devices are expected to be key components of datacom and computercom interconnects. In this context, we have already developed a photonic crystal laser [1, 2] and a membrane DFB laser [3], where the use of a buried heterostructure (BH) provides both good carrier confinement and good thermal conductivity. Fabrication cost is also an important issue. To reduce it, we have to employ large-scale wafers and Si CMOS fabrication technologies. In this talk, we will describe the fabrication of a membrane laser with its heterogeneous integration on Si substrate.
© 2015 Japan Society of Applied Physics, Optical Society of America
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