Abstract
Site-controlled In(Ga)As quantum dots (QD) were grown by molecular beam epitaxy on pre-patterned GaAs (001) substrates and integrated into optical resonators. The emission linewidth of single site-controlled QDs was probed using a standard micro-photoluminescence setup and exhibits values down to 38 µeV. We find a typical fine structure splitting of ~32 µeV. Both values are comparable to self-assembled QDs.
© 2011 AOS
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