Abstract
The Si-SiO2 interface plays a critical role in microelectronics. Due to its intrinsic sensitivity to interfaces, second-harmonic generation (SHG) has proven to be a uniquely effective, non-contact probe on interfacial electronic and structural properties [1]. Recently we demonstrated [2] that SHG from silicon wafers with native oxides increased fivefold within a 10 s period after turn-on of a 100-fs, 76- MHz, 770-nm source. This was attributed to electric-field-induced SHF due to electrons trapped in the oxide following absorption of simultaneously generated ultraviolet (UV) third-harmonic photons. Trapping effects are observed for all Si wafers with oxides <250Å thick, although the details depend on the nature of the oxide layer.
© 1996 Optical Society of America
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