Abstract
During the last few decades, photoacoustic spectroscopic (PAS) techniques have become well established for investigating phase transitions, chemical reactions, ultratrace detection, etc, Recently, PAS has been also applied tor direct verification and quantification of the optical and thermal properties of semiconductors,1 thin films,2 and semiconductor microstructures,3 In this paper we describe photoacoustic measurements of optical absorption spectra in a GaAs/AlGaAs multiple quantum well (MQW) without etching the GaAs substrate.
© 1994 Optical Society of America
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