Abstract
A new Esaki-Tsu-type doping superlattice has been made for the first time, we believe, by using a train of alternating n- and p-type delta-doped impurity sheets during crystal growth by molecular beam epitaxy. The δ-doping technique1 allows us to use high 2-D charge densities of 1 × 1013 cm−2 localized within one monolayer of the host GaAs lattice. Due to the alternating charge distribution sawtooth shaped conduction and valence band edges result (sawtooth superlattice). At period lengths of zp≤ 150 Å, which, we believe, have not been used before, the sawtooth superlattice is a superlattice according to the original proposal of Esaki and Tsu.2
© 1987 Optical Society of America
PDF ArticleMore Like This
T. B. SIMPSON, C. A. PENNISE, B. E. GORDON, J. E. ANTHONY, D. SMITH, and T. R. AUCOIN
WDD4 International Quantum Electronics Conference (IQEC) 1986
B. F. LEVINE, K. K. CHOI, C. G. BETHEA, J. WALKER, and R. J. MALIK
MCC2 International Quantum Electronics Conference (IQEC) 1987
J. J. Song, Y. S. Yoon, P. S. Jung, A. Fedotowsky, C. W. Nieh, and T. Vreeland
THPO53 OSA Annual Meeting (FIO) 1987