Abstract
Because of the increasing interest in long-wavelength devices operating in the 1.1–1.55-μm wavelength region, growth techniques such as organometallic vapor-phase epitaxy (OMVPE) and chemical-beam epitaxy (CBE) are required to use toxic hydrides such as AsH3 and PH3 as the source of group V precursors. Of the two hydrides, AsH3 is more toxic, having a daily 8-h exposure limit of only 50 parts per billion, which requires the installation of elaborate safety systems prior to any growth. As a result, there have been many attempts to replace arsine with metal-organic substitutes.
© 1990 Optical Society of America
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