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Fabrication of sub-millimeter detector using ultra-high pure GaAs film grown by liquid phase epitaxy for astronomical observation

M. Wakaki, T. Ohata, K. Watanabe, H. Murakami, O. Abe, and K. Kawasaki

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Abstract

Poor transmission of the atmosphere and lack of high performance detectors prevent astronomical observations in the submillimeter wavelength region. We are developing photoconductors utilizing shallow donor levels in GaAs semiconductor for future space mission. The GaAs photoconductor promises to be a good candidate of photon detector for this window.

© 2003 Optical Society of America

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