Abstract
In the present work we considered the photoelectric properties of the undoped polycrystal diamond films on the (111)-oriented p-type Si substrate. The spectral characteristic of the photovoltaic structure indicates three the energy thresholds for carrier generation of 1 eV, 1.1 eV and 1.2 eV. We can connected the first two with electron emission and third with hole emission from Si to diamond.
© 1995 Optical Society of America
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