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Conferences > CLEO_SI > 2023 > JW2A > JW2A.43

Effect of Quantum-Well Number on the Current Gain of Heterojunction Bipolar Light-Emitting Transistors

Mukul Kumar, Lu-Ching Hsueh, Sheng-Wen Cheng, Shu-Yun Ho, Shu-Jui Hsu, and Chao-Hsin Wu

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Abstract

We report the current gain decreases with adding the multiple-quantum-well (MQW) in the base of the heterojunction bipolar light-emitting transistors (HBLETs). The simulation result is consistent with experimental I-V characteristics for single-quantum-well (1QW) HBLET.

© 2023 The Author(s)

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