Abstract
We design and fabricate metalenses comprising substrateless ultra-deep via-holes in silicon with aspect ratios exceeding 30:1. Deep holes allow us to circumvent fabrication and fragility constraints which limit the aspect ratios of free-standing meta-atoms.
© 2021 The Author(s)
PDF Article | Presentation VideoMore Like This
Marek Vlk, Anurup Datta, Sebastian Alberti, Astrid Aksnes, Ganapathy Senthil Murugan, and Jana Jágerská
STu1A.2 CLEO: Science and Innovations (CLEO:S&I) 2021
Winnie N. Ye, Peter Duane, Munib Wober, and Kenneth B. Crozier
FTuV2 Frontiers in Optics (FiO) 2009
Sher-Yi Chiam, Mohammed Bahou, Herbert O Moser, Jianqiang Gu, Ranjan Singh, Weili Zhang, Jiaguang Han, and Andrew A. Bettiol
JWA114 Conference on Lasers and Electro-Optics (CLEO:S&I) 2009