Abstract
In recent years, an extensive investigation has been undertaken by many research groups in order to improve the external quantum efficiency (EQE) of InGaN-based blue and green light emitting diodes (LEDs), and several approaches have been proposed and demonstrated. Since its first demonstration in 2001 [1], the use of the corrugated interface substrate (CIS) technology appears to be very promising [2,3] due to the minimization of total internal reflection at the Sapphire/GaN interface.
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