Abstract
The Si/SiO2 interface is the most widely used system in modern electronic devices. Electrically active defects at this interface play an important role in device performance and reliability. In a previous study we have shown that in the case of highly boron doped Si, these interfacial defect states are ionized and result in a built-in interfacial electric field, E0, which gives rise to an instantaneous electric field induced second harmonic (EFISH) signal, I(2ω)(E0), upon irradiation with femtosecond laser pulses (73±5 fs, ) [1]. We now show that the observed power law dependence of the instantaneous EFISH signal on the incident intensity, , reveals 1.2 ≤ n ≤ 2.1 for six fs laser wavelengths 741.2 nm ≤ λ ≤ 801.0 nm. The lowest n value is observed at λ = 752.4 nm (2·hν = 3.3 eV). Its deviation from n = 2 is attributed to shielding of E0 by electron-hole pairs generated via two-photon absorption (TPA).
© 2013 IEEE
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