Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics Europe
  • Technical Digest Series (Optica Publishing Group, 2000),
  • paper CML1

Low threshold GaAsSb/GaAs broad area laser diodes emitting at 1220 nm

Not Accessible

Your library or personal account may give you access

Abstract

GaAs-based laser diodes emitting around 1 3 µm have gained tremendous interest, not only because they are suitable sources for low dispersion optical fiber transmission, but rather due to the prospect of using their active material in vertical-cavity lasers (VCSELs) [1]

© 2000 IEEE

PDF Article
More Like This
Pulsed 25-108°C operation of GalnNAs multiple quantum well vertical cavity lasers

C.W. Coldren, M.C. Larson, S.G. Spruytte, H.E. Garrett, and J.S. Harris
CTuL1 Conference on Lasers and Electro-Optics (CLEO:S&I) 2000

Low threshold-current-density vertical- cavity surface-emitting AlGaAs/GaAs diode lasers

D. BOTEZ, L. M. ZINKIEWICZ, T. J. ROTH, L. J. MAWST, and G. PETERSON
FC2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1989

Growth of GaInNAs/GaAs Quantum Well Lasers by Plasma-Assisted Molecular Beam Epitaxy

Z. Pan, L. H. Li, W. Zhang, Y. W. Lin, and R. H. Wu
CWF86 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2000

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.