Abstract
Periodically domain-inverted GaAs crystals for quasi phase matched (QPM) devices have attract much attention because the large optical nonlinearity of GaAs crystals, e.g. d36(GaAs) = 170 pm/V at 1.064 μm, will offer high conversion efficiency. Periodically domain-inverted AlGaAs waveguides based on wafer bonding followed by overgrowth have been reported. We have proposed and demonstrated an alternative way, sublattice reversal epitaxy, to fabricate domain-inverted Structures in the GaAs/Si/GaAs (100) system. Much higher qualities of domain-inverted GaAs epitaxial films can be grown by sublattice reversal epitaxy in the lattice-matched GaAs/Ge/GaAs (100) systems and GaAs overgrowth on the periodically patterned template allows us to attain periodical domain inversion in GaAs crystals.[1][2]
© 2000 IEEE
PDF ArticleMore Like This
Shinji Koh, Yasuhiro Shiraki, Takashi Kondo, and Ryoichi Ito
ThB23 Nonlinear Optics: Materials, Fundamentals and Applications (NLO) 2000
Tomonori Matsushita, Takahisa Yamamoto, and Takashi Kondo
CD5_2 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2007
Takashi Kondo, Tomonori Matsushita, Junya Ota, Kaori Hanashima, Ikuma Ohta, Hiroshi Ishikawa, Kengo Ban, and Tae Woong Kim
JTuA6 Integrated Photonics and Nanophotonics Research and Applications (IPR) 2009