Abstract
In this communication we present a new synthesis method of silicon nanoclusters (Sin, where n > 20) by conventional laser ablation technique. Ablation and deposition were performed by ArF excimer laser (λ = 193 nm, pulse duration t = 15 ns, FWHM) in different background gases: He, Ar, O2, H2 or their mixtures. Typically, the gas pressure was about 0.1-5 Torr.
© 1998 IEEE
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