Abstract
GaAs1-xBix laser diodes (LDs) with low temperature dependence of the oscillation wavelength (dλ/dT) are demonstrated. The value dλ/dT for a GaAs0.97Bi0.03 LD was as low as 0.16 nm/K. This reduction is attributed to a reduction in the temperature coefficient of the band gap.
© 2014 Optical Society of America
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