Abstract
The InGaAs/InP P-I-N photodiodes are grown by a metal-organic chemical vapor deposition (MOCVD) with micro-effusion tubes of hydride carrier and reaction gases. Removing top InGaAs and using SiOx coverage on the photon absorbed area leads to enhance responsivity (~3A/W) and quantum efficiency (>85%). And using Zn diffused to top ring InGaAs results in good ohmic contact region.
© 2007 IEEE
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