Abstract
Ti:sapphire has enabled tunable high-efficiency and high-power laser systems. High figure of merit (FOM) crystals for oscillators have been grown by the CZ-method1 and heat exchange method (HEM).2 For multipass amplifiers, however, crystals require higher single-pass-gain rather than high FOM. In this presentation, we will describe new crystal-growth techniques, which produce high-gain and high-concentration crystals.
© 1995 IEEE
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