Femtosecond Dispersion Measurements of 1.3 μm Quantum Dot Semiconductor Optical Amplifier

M. Bagnell; J. Davila-Rodriguez; A. Ardey; P.J. Delfyett

doi:10.1364/CLEO.2010.CThL5

Conference on Lasers and Electro-Optics 2010
OSA Technical Digest (CD) (Optica Publishing Group, 2010),
paper CThL5
•https://doi.org/10.1364/CLEO.2010.CThL5

Femtosecond Dispersion Measurements of 1.3 μm Quantum Dot Semiconductor Optical Amplifier

M. Bagnell, J. Davila-Rodriguez, A. Ardey, and P.J. Delfyett

Conference on Lasers and Electro-Optics 2010

San Jose, California United States
16–21 May 2010
ISBN: 978-1-55752-889-6

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Quantum Wires and Dots (CThL)

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M. Bagnell, J. Davila-Rodriguez, A. Ardey, and P. J. Delfyett, "Femtosecond Dispersion Measurements of 1.3 μm Quantum Dot Semiconductor Optical Amplifier," in Conference on Lasers and Electro-Optics 2010, OSA Technical Digest (CD) (Optica Publishing Group, 2010), paper CThL5.

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Abstract

Spectral interferometry is used to measure the dispersion of a quantum dot semiconductor optical amplifier under various injection current values in the wavelength range of 1200 to 1340 nm, spanning ground and first excited state.

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