Abstract
The lasing characteristics of a GaN VCSEL with two dielectric DBRs of SiO2/TiO2 and SiO2/Ta2O5 were investigated. The laser emits wavelength at 414 nm under optical pumping at room temperature with a threshold energy of 270 nJ.
© 2006 Optical Society of America
PDF ArticleMore Like This
Jung-Tang Chu, Tien-chang Lu, Hao-Chung Kuo, and Shing-Chung Wang
JWA124 Conference on Lasers and Electro-Optics (CLEO:S&I) 2007
Tien-Chang Lu, Bo Siao Cheng, Tzeng-Tsong Wu, Shih-Wei Chen, Chien-Kang Chen, Cheng-Hung Chen, Bo-Min Tu, Zhen-Yu Li, Hao-Chung Kuo, and Shing-Chung Wang
CFL5 CLEO: Science and Innovations (CLEO:S&I) 2011
Tien-Chang Lu, Tsung-Ting Kao, Shih-Wei Chen, Chih-Chiang Kao, Hao-Chung Kuo, and Shing-Chung Wang
CMI5 Conference on Lasers and Electro-Optics (CLEO:S&I) 2008