Abstract
GaN-based semiconductors have received an ever-increasing interest for optoelectronic applications in the blue and ultraviolet spectral region. It is well known that optical properties near the band-edge are dominated by the many-body Coulomb correlation, or the dynamics of excitons. At room temperature, through interaction with longitudinal optical phonons, ionization of excitons plays an important role among various carrier dynamics. Exciton ionizations with time constant of a few hundred femtoseconds have been observed in semiconductor quantum wells at room temperature.1,2 Through optical absorption measurement, exciton ionization has also been observed in GaN epilayers up to room temperature.3 By using transmission-type pumpprobe measurement1 around the exciton transition energy, we report, to our knowledge, the first direct measurement of exciton ionization process in wurzite GaN.
© 2002 Optical Society of America
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