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Conferences > CLEO > 1995 > CTuP > CTuP2
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1995),
  • paper CTuP2

Enhancement in excitonic absorption for GaAs/AlGaAs multipie-quantum-well structures under external anisotropic strain

Man-fang Huang, Elsa Garmire, Afshin Partovi, and Minghwei Hong

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Abstract

We report 25% enhancement in heavy-hole excitonic absorption due to simultaneous compression and tension along two perpendicular directions. The anisotropic absorption characteristics are created in a GaAs/AlGaAs multiple-quantum-well (MQW) structure by differential thermal expansion1 between LiTaO3 and GaAs. The anisotropic excitonic-absorption feature of this device is important for polarization-sensitive applications. The quantum-confined Stark effect of the resulting strained GaAs/AlGaAs MQW will also be discussed.

© 1995 Optical Society of America

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