Abstract
Recently suggested effect of the non-steady- state photo-EMF via the dynamic space charge gratings1 proved to be an efficient technique for characterization of the photorefractive crystals and noncenter symmetrical photoconductive media. In addition, different adaptive photodetectors possessing the unique properties for high-sensitivity laser vibrometers, optical fiber sensors, and communication lines can be developed on this basis,2,3 The present work reports investigations of this effect in semi-insulating GaAs and CdTe in the near-IR part of the spectrum (0.8 - 0.9 µm) which is dose to the fundamental optical absorption edge of these crystals.
© 1993 Optical Society of America
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